INVESTIGATION OF THE OXYGEN-RELATED LATTICE-DEFECTS IN CZOCHRALSKI SILICON BY MEANS OF ELECTRON-MICROSCOPY TECHNIQUES

被引：136

作者：

BENDER, H

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1984年 / 86卷 / 01期

关键词：

D O I：

10.1002/pssa.2210860126

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：245 / 261

页数：17

共 25 条

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[5] BENDER H, UNPUB J ELECTRONIC M
[6] EARLY STAGES OF OXYGEN SEGREGATION AND PRECIPITATION IN SILICON
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SEIDMAN, DN
[J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (04) : 825 - 836
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[9] CAZCARRA V, 1978, I PHYS SER C, V46, P303
[10] CLAEYS C, 1981, SEMICONDUCTOR SILICO, P730