ELECTRON MICROSCOPICAL STUDY OF OXYGEN RELATED DEFECTS IN CZOCHRALSKI SILICON

被引：4

作者：

BENDER, H ^{[1
]}

CLAEYS, C ^{[1
]}

VANLANDUYT, J ^{[1
]}

DECLERCK, G ^{[1
]}

AMELINCKX, S ^{[1
]}

VANOVERSTRAETEN, R ^{[1
]}

机构：

[1] CATHOLIC UNIV LEUVEN,B-3030 HEVERLE,BELGIUM

来源：

JOURNAL DE PHYSIQUE | 1983年 / 44卷 / NC-4期

关键词：

D O I：

10.1051/jphyscol:1983431

中图分类号：

学科分类号：

摘要：

引用

页码：261 / 265

页数：5

共 16 条

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[3] BOURRET A, 1981, I PHYS C SER, V60, P9
[4] CLAEYS C, 1981, ELECTROCHEMICAL SOC, P730
[5] CLAEYS C, 1982, EUROPHYSICS J PHYS B
[6] INOUE N, 1981, ELECTROCHEMICAL SOC, P282
[7] ORIGIN AND CONTROL OF MATERIAL DEFECTS IN SILICON VLSI TECHNOLOGIES - AN OVERVIEW
JASTRZEBSKI, L
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (04) : 475 - 487
[8] COMPARISON OF 2 KINDS OF OXYGEN DONORS IN SILICON BY RESISTIVITY MEASUREMENTS
KANAMORI, A
KANAMORI, M
[J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (12) : 8095 - 8101
[9] THE STRUCTURE AND FORMATION OF ROD DEFECTS IN ION-IMPLANTED SILICON
LAMBERT, JA
DOBSON, PS
[J]. PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1981, 44 (05): : 1043 - 1052
[10] WARPAGE OF SILICON-WAFERS
LEROY, B
PLOUGONVEN, C
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (04) : 961 - 970