COMPARISON OF 2 KINDS OF OXYGEN DONORS IN SILICON BY RESISTIVITY MEASUREMENTS

被引：146

作者：

KANAMORI, A

KANAMORI, M

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1979年 / 50卷 / 12期

关键词：

D O I：

10.1063/1.325936

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：8095 / 8101

页数：7

共 16 条

[1] EFFECT OF CARBON ON THERMAL DONOR FORMATION IN HEAT-TREATED PULLED SILICON CRYSTALS [J].

BEAN, AR ;

NEWMAN, RC .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1972, 33 (02) :255-&

[2] EFFECTS OF HEAT-TREATMENT ON DISLOCATION-FREE OXYGEN-CONTAINING SILICON-CRYSTALS [J].

CAPPER, P ;

JONES, AW ;

WALLHOUSE, EJ ;

WILKES, JG .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (04) :1646-1655

[3] COOLING RATES OF LARGE-DIAMETER SILICON-CRYSTALS [J].

CAPPER, P ;

WILKES, JG .

APPLIED PHYSICS LETTERS, 1978, 32 (03) :187-189

[4] DEFECTS IN IRRADIATED SILICON .2. INFRARED ABSSORPTION OF SI-A CENTER [J].

CORBETT, JW ;

WATKINS, GD ;

CHRENKO, RM ;

MCDONALD, RS .

PHYSICAL REVIEW, 1961, 121 (04) :1015-&

[5] EFFECT OF HEAT TREATMENT UPON THE ELECTRICAL PROPERTIES OF SILICON CRYSTALS [J].

FULLER, CS ;

LOGAN, RA .

JOURNAL OF APPLIED PHYSICS, 1957, 28 (12) :1427-1436

[6]

GRINSHTEIN PM, 1978, SOV PHYS SEMICOND+, V12, P68

[7]

HELMREICH D, 1977, SEMICONDUCTOR SILICO, V2, P626

[8] MECHANISM OF THE FORMATION OF DONOR STATES IN HEAT-TREATED SILICON [J].

KAISER, W ;

FRISCH, HL ;

REISS, H .

PHYSICAL REVIEW, 1958, 112 (05) :1546-1554

[9] ELECTRICAL AND OPTICAL PROPERTIES OF HEAT-TREATED SILICON [J].

KAISER, W .

PHYSICAL REVIEW, 1957, 105 (06) :1751-1756

[10] ANNEALING BEHAVIOR OF THE OXYGEN DONOR IN SILICON [J].

KANAMORI, A .

APPLIED PHYSICS LETTERS, 1979, 34 (04) :287-289

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