EFFECTS OF HEAT-TREATMENT ON DISLOCATION-FREE OXYGEN-CONTAINING SILICON-CRYSTALS

被引：83

作者：

CAPPER, P ^{[1
]}

JONES, AW ^{[1
]}

WALLHOUSE, EJ ^{[1
]}

WILKES, JG ^{[1
]}

机构：

[1] MILLBROOK IND EST,MULLARD LTD,SOUTHAMPTON,ENGLAND

来源：

JOURNAL OF APPLIED PHYSICS | 1977年 / 48卷 / 04期

关键词：

D O I：

10.1063/1.323847

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：1646 / 1655

页数：10

相关论文

共 27 条

[1] LOWERING OF BREAKDOWN VOLTAGE OF SEMICONDUCTOR SILICON DUE TO PRECIPITATION OF IMPURITY CARBON
AKIYAMA, N
YATSURUGI, Y
ENDO, Y
IMAYOSHI, Z
[J]. APPLIED PHYSICS LETTERS, 1973, 22 (12) : 630 - 631
[2] DETERMINATION OF PARTS PER BILLION OF OXYGEN IN SILICON
BAKER, JA
[J]. SOLID-STATE ELECTRONICS, 1970, 13 (11) : 1431 - &
[3] BATAVIN VV, 1970, SOV PHYS CRYSTALLOGR, V15, P100
[4] EFFECT OF CARBON ON THERMAL DONOR FORMATION IN HEAT-TREATED PULLED SILICON CRYSTALS
BEAN, AR
NEWMAN, RC
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1972, 33 (02) : 255 - &
[5] BREWER L, 1962, T METALL SOC AIME, V224, P1268
[6] EFFECT OF HEAT TREATMENT UPON THE ELECTRICAL PROPERTIES OF SILICON CRYSTALS
FULLER, CS
LOGAN, RA
[J]. JOURNAL OF APPLIED PHYSICS, 1957, 28 (12) : 1427 - 1436
[7] THE DIFFUSION OF OXYGEN IN SILICON AND GERMANIUM
HAAS, C
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1960, 15 (1-2) : 108 - 111
[8] INFRARED SPECTRA OF HEAT TREATMENT CENTERS IN SILICON
HROSTOWSKI, HJ
KAISER, RH
[J]. PHYSICAL REVIEW LETTERS, 1958, 1 (06) : 199 - 200
[9] ANOMALOUS TEMPERATURE EFFECT OF OXIDATION STACKING-FAULTS IN SILICON
HU, SM
[J]. APPLIED PHYSICS LETTERS, 1975, 27 (04) : 165 - 167
[10] EFFECT OF OXYGEN ON DISLOCATION MOVEMENT IN SILICON
HU, SM
PATRICK, WJ
[J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (05) : 1869 - 1874