LOWERING OF BREAKDOWN VOLTAGE OF SEMICONDUCTOR SILICON DUE TO PRECIPITATION OF IMPURITY CARBON

被引：12

作者：

AKIYAMA, N

YATSURUGI, Y

ENDO, Y

IMAYOSHI, Z

机构：

[1] INST PHYS & CHEM RES, WAKO, SAITAMA, JAPAN

[2] KOMATSU ELECTR MET CO, HIRATSUKA, JAPAN

来源：

APPLIED PHYSICS LETTERS | 1973年 / 22卷 / 12期

关键词：

D O I：

10.1063/1.1654534

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：630 / 631

页数：2

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