CONCENTRATION AND BEHAVIOR OF CARBON IN SEMICONDUCTOR SILICON

[1] EFFECT OF CARBON ON LATTICE PARAMETER OF SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (09) : 4365 - &

[2] HALDEN FA, 1960, SILICON CARBIDE HIGH, P115

[3] ELECTRICAL CONTACTS TO SILICON CARBIDE [J]. JOURNAL OF APPLIED PHYSICS, 1958, 29 (06) : 914 - 917

[4] VIBRATIONAL ABSORPTION OF CARBON IN SILICON [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1965, 26 (02) : 373 - &

[5] THE IDENTIFICATION OF PRECIPITATE PARTICLES IN SINGLE CRYSTALS OF SILICON BY REFLECTION ELECTRON DIFFRACTION [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1960, 76 (492): : 993 - 996

[6] CHARGED PARTICLE ACTIVATION ANALYSIS FOR CARBON, NITROGEN AND OXYGEN IN SEMICONDUCTOR SILCON [J]. JOURNAL OF RADIOANALYTICAL CHEMISTRY, 1970, 4 (01): : 87 - &

[7] SOLUBILITY OF CARBON IN SILICON AND GERMANIUM [J]. JOURNAL OF CHEMICAL PHYSICS, 1959, 30 (06) : 1551 - 1555

[8] Spenke E., 1969, Semiconductor silicon, P1

[1] EFFECT OF CARBON ON LATTICE PARAMETER OF SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (09) : 4365 - &

[2] HALDEN FA, 1960, SILICON CARBIDE HIGH, P115

[3] ELECTRICAL CONTACTS TO SILICON CARBIDE [J]. JOURNAL OF APPLIED PHYSICS, 1958, 29 (06) : 914 - 917

[4] VIBRATIONAL ABSORPTION OF CARBON IN SILICON [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1965, 26 (02) : 373 - &

[5] THE IDENTIFICATION OF PRECIPITATE PARTICLES IN SINGLE CRYSTALS OF SILICON BY REFLECTION ELECTRON DIFFRACTION [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1960, 76 (492): : 993 - 996

[6] CHARGED PARTICLE ACTIVATION ANALYSIS FOR CARBON, NITROGEN AND OXYGEN IN SEMICONDUCTOR SILCON [J]. JOURNAL OF RADIOANALYTICAL CHEMISTRY, 1970, 4 (01): : 87 - &

[7] SOLUBILITY OF CARBON IN SILICON AND GERMANIUM [J]. JOURNAL OF CHEMICAL PHYSICS, 1959, 30 (06) : 1551 - 1555

[8] Spenke E., 1969, Semiconductor silicon, P1