SOLUBILITY OF CARBON IN PULLED SILICON CRYSTALS

[1] EFFECT OF CARBON ON LATTICE PARAMETER OF SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (09) : 4365 - &

[2] BALKANSKI M, 1960, CR HEBD ACAD SCI, V251, P1277

[3] Bean A. R., 1970, Solid State Communications, V8, P175, DOI 10.1016/0038-1098(70)90074-8

[4] ELECTRON IRRADIATION DAMAGE IN SILICON CONTAINING CARBON AND OXYGEN [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1970, 31 (04) : 739 - &

[5] DUCRET L, 1962, ULTRAPURIFICATION SE, P461

[6] INFLUENCE OF CARBON ON PRECIPITATION OF COPPER IN SILICON SINGLE CRYSTALS [J]. PHYSICA STATUS SOLIDI, 1967, 22 (02): : 463 - &

[7] THE DIFFUSION OF OXYGEN IN SILICON AND GERMANIUM [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1960, 15 (1-2) : 108 - 111

[8] CARBON BEHAVIOR IN ZONE-REFINING OF SILICON [J]. SOLID-STATE ELECTRONICS, 1969, 12 (11) : 915 - &

[9] THE SOLUBILITY OF OXYGEN IN SILICON [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 9 (3-4) : 214 - 216

[10] Newman R.C, 1961, METALL SEMICOND MAT, V15, P201

[1] EFFECT OF CARBON ON LATTICE PARAMETER OF SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (09) : 4365 - &

[2] BALKANSKI M, 1960, CR HEBD ACAD SCI, V251, P1277

[3] Bean A. R., 1970, Solid State Communications, V8, P175, DOI 10.1016/0038-1098(70)90074-8

[4] ELECTRON IRRADIATION DAMAGE IN SILICON CONTAINING CARBON AND OXYGEN [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1970, 31 (04) : 739 - &

[5] DUCRET L, 1962, ULTRAPURIFICATION SE, P461

[6] INFLUENCE OF CARBON ON PRECIPITATION OF COPPER IN SILICON SINGLE CRYSTALS [J]. PHYSICA STATUS SOLIDI, 1967, 22 (02): : 463 - &

[7] THE DIFFUSION OF OXYGEN IN SILICON AND GERMANIUM [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1960, 15 (1-2) : 108 - 111

[8] CARBON BEHAVIOR IN ZONE-REFINING OF SILICON [J]. SOLID-STATE ELECTRONICS, 1969, 12 (11) : 915 - &

[9] THE SOLUBILITY OF OXYGEN IN SILICON [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 9 (3-4) : 214 - 216

[10] Newman R.C, 1961, METALL SEMICOND MAT, V15, P201