CARBON BEHAVIOR IN ZONE-REFINING OF SILICON

[1] TRIPYRAMIDS AND ASSOCIATED DEFECTS IN EPITAXIAL SILICON LAYERS [J]. PHILOSOPHICAL MAGAZINE, 1965, 11 (113): : 1007 - &

[2] THE DISTRIBUTION OF SOLUTE IN CRYSTALS GROWN FROM THE MELT .1. THEORETICAL [J]. JOURNAL OF CHEMICAL PHYSICS, 1953, 21 (11) : 1987 - 1991

[3] INFLUENCE OF CARBON ON PRECIPITATION OF COPPER IN SILICON SINGLE CRYSTALS [J]. PHYSICA STATUS SOLIDI, 1967, 22 (02): : 463 - &

[4] TRIPYRAMID GROWTH OF EPITAXIAL SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (2P1) : 189 - &

[5] CARBON FORMATION DURING FABRICATION OF PUREST SILICON [J]. SOLID-STATE ELECTRONICS, 1968, 11 (11) : 993 - &

[6] NIXON FE, 1964, BEISPIELE TAFELN LAP

[7] PFANN WG, 1958, ZONE MELTING, P28

[8] REUSCHEL K, 1967, SIEMENS-Z, V41, P669

[9] CONCERNING CARBON CONTENT IN SEMICONDUCTOR SILICON [J]. SOLID-STATE ELECTRONICS, 1965, 8 (09) : 767 - &

[1] TRIPYRAMIDS AND ASSOCIATED DEFECTS IN EPITAXIAL SILICON LAYERS [J]. PHILOSOPHICAL MAGAZINE, 1965, 11 (113): : 1007 - &

[2] THE DISTRIBUTION OF SOLUTE IN CRYSTALS GROWN FROM THE MELT .1. THEORETICAL [J]. JOURNAL OF CHEMICAL PHYSICS, 1953, 21 (11) : 1987 - 1991

[3] INFLUENCE OF CARBON ON PRECIPITATION OF COPPER IN SILICON SINGLE CRYSTALS [J]. PHYSICA STATUS SOLIDI, 1967, 22 (02): : 463 - &

[4] TRIPYRAMID GROWTH OF EPITAXIAL SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (2P1) : 189 - &

[5] CARBON FORMATION DURING FABRICATION OF PUREST SILICON [J]. SOLID-STATE ELECTRONICS, 1968, 11 (11) : 993 - &

[6] NIXON FE, 1964, BEISPIELE TAFELN LAP

[7] PFANN WG, 1958, ZONE MELTING, P28

[8] REUSCHEL K, 1967, SIEMENS-Z, V41, P669

[9] CONCERNING CARBON CONTENT IN SEMICONDUCTOR SILICON [J]. SOLID-STATE ELECTRONICS, 1965, 8 (09) : 767 - &