EFFECT OF OXYGEN ON DISLOCATION MOVEMENT IN SILICON

被引：94

作者：

HU, SM ^{[1
]}

PATRICK, WJ ^{[1
]}

机构：

[1] IBM CORP,SYST PROD DIV,HOPEWELL JUNCTION,NY 12533

来源：

关键词：

D O I：

10.1063/1.321883

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1869 / 1874

页数：6

共 16 条

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[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1964, 25 (08) : 873 - &
[4] EROFEEV VN, 1971, SOV PHYS-SOLID STATE, V13, P116
[5] THE SOLUBILITY OF OXYGEN IN SILICON
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[J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (11) : 4413 - +
[7] DISLOCATIONS IN THERMALLY STRESSED SILICON WAFERS
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[J]. APPLIED PHYSICS LETTERS, 1973, 22 (05) : 261 - 264
[8] HU SM, 1975, J APPL PHYS, V46, pR30
[9] MECHANISM OF THE FORMATION OF DONOR STATES IN HEAT-TREATED SILICON
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[J]. PHYSICAL REVIEW, 1958, 112 (05): : 1546 - 1554
[10] MOREZANE K, 1969, J APPL PHYS, V40, P4104