INFRARED SPECTRA OF HEAT TREATMENT CENTERS IN SILICON

被引：44

作者：

HROSTOWSKI, HJ

KAISER, RH

机构：

来源：

关键词：

D O I：

10.1103/PhysRevLett.1.199

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：199 / 200

页数：2

共 9 条

FULLER, CS ;

LOGAN, RA .

[2] INFRARED ABSORPTION OF OXYGEN IN SILICON [J].

HROSTOWSKI, HJ ;

KAISER, RH .

PHYSICAL REVIEW, 1957, 107 (04) :966-972

[3]

HROSTOWSKI HJ, UNPUBLISHED

[4]

KAISER, 1956, PHYS REV, V101, P1264

[5] ELECTRICAL AND OPTICAL PROPERTIES OF HEAT-TREATED SILICON [J].

KAISER, W .

PHYSICAL REVIEW, 1957, 105 (06) :1751-1756

[6] THEORY OF DONOR STATES IN SILICON [J].

KOHN, W ;

LUTTINGER, JM .

PHYSICAL REVIEW, 1955, 98 (04) :915-922

[7]

MORIN, 1954, PHYS REV, V96, P833

NEWMAN, R .

PHYSICAL REVIEW, 1956, 103 (01) :103-106

[9] DRIFT MOBILITIES IN SEMICONDUCTORS .2. SILICON [J].

PRINCE, MB .

PHYSICAL REVIEW, 1954, 93 (06) :1204-1206