CONCENTRATION EFFECTS ON THE LINE SPECTRA OF BOUND HOLES IN SILICON

[1] BALTENSPERGER W, 1953, PHILOS MAG, V44, P1355

[2] BURSTEIN, 1953, J PHYS CHEM, V57, P849

[3] BURSTEIN, 1955, 1954 P C PHOT ATL CI

[4] ELECTRICAL PROPERTIES OF NEAR-DEGENERATE BORON-DOPED SILICON [J]. PHYSICAL REVIEW, 1955, 100 (04): : 1075 - 1078

[5] ENERGY STATES OF OVERLAPPING IMPURITY CARRIERS IN SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1952, 88 (04): : 893 - 894

[6] ON THE MECHANISM OF IMPURITY BAND CONDUCTION IN SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1950, 80 (06): : 1104 - 1105

[7] FEHER, 1955, PHYS REV, V100, P1784

[8] THE ELECTRICAL PROPERTIES OF GERMANIUM SEMICONDUCTORS AT LOW TEMPERATURES [J]. PHYSICA, 1954, 20 (10): : 834 - 844

[9] RESISTIVITY AND HALL EFFECT OF GERMANIUM AT LOW TEMPERATURES [J]. PHYSICAL REVIEW, 1954, 96 (05): : 1226 - 1236

[10] INTERPRETATION OF DONOR STATE ABSORPTION LINES IN SILICON [J]. PHYSICAL REVIEW, 1955, 98 (06): : 1856 - 1857

[1] BALTENSPERGER W, 1953, PHILOS MAG, V44, P1355

[2] BURSTEIN, 1953, J PHYS CHEM, V57, P849

[3] BURSTEIN, 1955, 1954 P C PHOT ATL CI

[4] ELECTRICAL PROPERTIES OF NEAR-DEGENERATE BORON-DOPED SILICON [J]. PHYSICAL REVIEW, 1955, 100 (04): : 1075 - 1078

[5] ENERGY STATES OF OVERLAPPING IMPURITY CARRIERS IN SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1952, 88 (04): : 893 - 894

[6] ON THE MECHANISM OF IMPURITY BAND CONDUCTION IN SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1950, 80 (06): : 1104 - 1105

[7] FEHER, 1955, PHYS REV, V100, P1784

[8] THE ELECTRICAL PROPERTIES OF GERMANIUM SEMICONDUCTORS AT LOW TEMPERATURES [J]. PHYSICA, 1954, 20 (10): : 834 - 844

[9] RESISTIVITY AND HALL EFFECT OF GERMANIUM AT LOW TEMPERATURES [J]. PHYSICAL REVIEW, 1954, 96 (05): : 1226 - 1236

[10] INTERPRETATION OF DONOR STATE ABSORPTION LINES IN SILICON [J]. PHYSICAL REVIEW, 1955, 98 (06): : 1856 - 1857