ORIGIN AND CONTROL OF MATERIAL DEFECTS IN SILICON VLSI TECHNOLOGIES - AN OVERVIEW

被引：66

作者：

JASTRZEBSKI, L

机构：

来源：

关键词：

D O I：

10.1109/T-ED.1982.20729

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：475 / 487

页数：13

共 70 条

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[9] CRAVEN RA, 1981, SEMICONDUCTOR SILICO, V81, P254
[10] THE EFFECT OF DOPING ON THE FORMATION OF SWIRL DEFECTS IN DISLOCATION-FREE CZOCHRALSKI-GROWN SILICON-CRYSTALS
DEKOCK, AJR
VANDEWIJGERT, WM
[J]. JOURNAL OF CRYSTAL GROWTH, 1980, 49 (04) : 718 - 734