THE EFFECT OF DOPING ON THE FORMATION OF SWIRL DEFECTS IN DISLOCATION-FREE CZOCHRALSKI-GROWN SILICON-CRYSTALS

[1] Bailar JC., 1973, COMPREHENSIVE INORGA

[2] ENERGY LEVELS IN IRRADIATED GERMANIUM [J]. JOURNAL OF APPLIED PHYSICS, 1959, 30 (08) : 1218 - 1221

[3] MELTING OF SILICON-CRYSTALS AND A POSSIBLE ORIGIN OF SWIRL DEFECTS [J]. JOURNAL OF CRYSTAL GROWTH, 1977, 39 (02) : 328 - 340

[4] CHIKAWA J, 1979, JAPAN J APPL PHY S18, V18, P153

[5] de Kock A. J. R., 1973, Journal of Applied Physics, V44, P2816, DOI 10.1063/1.1662656

[6] EFFECT OF DOPING ON MICRODEFECT FORMATION IN AS-GROWN DISLOCATION-FREE CZOCHRALSKI SILICON-CRYSTALS [J]. APPLIED PHYSICS LETTERS, 1979, 34 (09) : 611 - 613

[7] DEKOCK AJR, 1973, PHILIPS RES REP S1

[8] DEKOCK AJR, 1973, SEMICONDUCTOR SILICO, P83

[9] DEKOCK AJR, 1977, SEMICONDUCTOR SILICO, P508

[10] DEKOCK AJR, 1977, CRYSTAL GROWTH MAT, P622

[1] Bailar JC., 1973, COMPREHENSIVE INORGA

[2] ENERGY LEVELS IN IRRADIATED GERMANIUM [J]. JOURNAL OF APPLIED PHYSICS, 1959, 30 (08) : 1218 - 1221

[3] MELTING OF SILICON-CRYSTALS AND A POSSIBLE ORIGIN OF SWIRL DEFECTS [J]. JOURNAL OF CRYSTAL GROWTH, 1977, 39 (02) : 328 - 340

[4] CHIKAWA J, 1979, JAPAN J APPL PHY S18, V18, P153

[5] de Kock A. J. R., 1973, Journal of Applied Physics, V44, P2816, DOI 10.1063/1.1662656

[6] EFFECT OF DOPING ON MICRODEFECT FORMATION IN AS-GROWN DISLOCATION-FREE CZOCHRALSKI SILICON-CRYSTALS [J]. APPLIED PHYSICS LETTERS, 1979, 34 (09) : 611 - 613

[7] DEKOCK AJR, 1973, PHILIPS RES REP S1

[8] DEKOCK AJR, 1973, SEMICONDUCTOR SILICO, P83

[9] DEKOCK AJR, 1977, SEMICONDUCTOR SILICO, P508

[10] DEKOCK AJR, 1977, CRYSTAL GROWTH MAT, P622