MELTING OF SILICON-CRYSTALS AND A POSSIBLE ORIGIN OF SWIRL DEFECTS

被引：68

作者：

CHIKAWA, J

SHIRAI, S

机构：

[1] NHK,BROADCASTING SCI RES LABS,SETAGAYA KU,TOKYO 157,JAPAN

[2] SHIN ETSU HANDOTAI CO,ANNAKA,GUNMA 379 01,JAPAN

来源：

JOURNAL OF CRYSTAL GROWTH | 1977年 / 39卷 / 02期

关键词：

D O I：

10.1016/0022-0248(77)90282-2

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：328 / 340

页数：13

共 41 条

[1] GROWTH OF SI SINGLE-CRYSTALS FROM MELT AND IMPURITY INCORPORATION MECHANISMS [J].

ABE, T .

JOURNAL OF CRYSTAL GROWTH, 1974, 24 (OCT) :463-467

[2] ETCH PITS OBSERVED IN DISLOCATION-FREE SILICON CRYSTALS [J].

ABE, T ;

SAMIZO, T ;

MARUYAMA, S .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1966, 5 (05) :458-&

[3]

ABE T, 1973, SEMICONDUCTOR SILICO, P95

[4] TEM OBSERVATION OF DISLOCATION LOOPS CORRELATED WITH INDIVIDUAL SWIRL DEFECTS IN AS-GROWN SILICON [J].

BERNEWITZ, LI ;

KOLBESEN, BO ;

MAYER, KR ;

SCHUH, GE .

APPLIED PHYSICS LETTERS, 1974, 25 (05) :277-279

[5]

BERNEWITZ LI, 1973, PHYS STATUS SOLIDI A, V16, P579, DOI 10.1002/pssa.2210160228

[6] DISTRIBUTION OF SOLUTE IN CRYSTALS GROWN FROM THE MELT .2. EXPERIMENTAL [J].

BURTON, JA ;

KOLB, ED ;

SLICHTER, WP ;

STRUTHERS, JD .

JOURNAL OF CHEMICAL PHYSICS, 1953, 21 (11) :1991-1996

[7]

CHIKAWA J, 1974, J CRYST GROWTH, V24, P61, DOI 10.1016/0022-0248(74)90281-4

[8] X-RAY TOPOGRAPHY WITH CHROMATIC-ABERRATION CORRECTION [J].

CHIKAWA, J ;

FUJIMOTO, I ;

ASAEDA, Y .

JOURNAL OF APPLIED PHYSICS, 1971, 42 (12) :4731-&

[9]

CHIKAWA J, 1967, ADV XRAY ANAL, V10, P153

[10] NEW X-RAY TOPOGRAPHIC TECHNIQUE FOR DETECTION OF SMALL DEFECTS IN HIGHLY PERFECT CRYSTALS [J].

CHIKAWA, JI ;

ASAEDA, Y ;

FUJIMOTO, I .

JOURNAL OF APPLIED PHYSICS, 1970, 41 (05) :1922-&

← 1 2 3 4 5 →