SMALL GEOMETRY DEPLETED BASE BIPOLAR-TRANSISTORS (BSIT) - VLSI DEVICES

被引：20

作者：

STORK, JMC

PLUMMER, JD

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1981年 / 28卷 / 11期

关键词：

D O I：

10.1109/T-ED.1981.20613

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：1354 / 1363

页数：10

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共 21 条

[1] ANTONIADIS DA, 1978, SEL78020 STANF U STA
[2] DESIGN OF ION-IMPLANTED MOSFETS WITH VERY SMALL PHYSICAL DIMENSIONS
DENNARD, RH
GAENSSLEN, FH
YU, HN
RIDEOUT, VL
BASSOUS, E
LEBLANC, AR
[J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1974, SC 9 (05) : 256 - 268
[3] DOANE DA, 1980, SOLID STATE TECHNOL, V23, P101
[4] NONPLANAR VLSI DEVICE ANALYSIS USING THE SOLUTION OF POISSON EQUATION
GREENFIELD, JA
DUTTON, RW
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) : 1520 - 1532
[5] TRANSITION REGION BEHAVIOR IN ABRUPT, FORWARD-BIASED PN-JUNCTIONS
GUCKEL, H
THOMAS, DC
IYENGAR, SV
DEMIRKOL, A
[J]. SOLID-STATE ELECTRONICS, 1977, 20 (07) : 647 - 652
[6] A CHARGE CONTROL RELATION FOR BIPOLAR TRANSISTORS
GUMMEL, HK
[J]. BELL SYSTEM TECHNICAL JOURNAL, 1970, 49 (01): : 115 - +
[7] LIMITATIONS IN MICROELECTRONICS .2. BIPOLAR TECHNOLOGY
HOENEISEN, B
MEAD, CA
[J]. SOLID-STATE ELECTRONICS, 1972, 15 (08) : 891 - +
[8] POTENTIAL AND ELECTRIC-FIELD AT METALLURGICAL BOUNDARY OF AN ABRUPT P-N SEMICONDUCTOR JUNCTION
KENNEDY, DP
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, 22 (11) : 988 - 994
[9] KING MC, 1981, MICROSTRUCTURE SCI E
[10] REDISTRIBUTION OF BORON DURING THERMAL-OXIDATION OF SILICON
LEE, HG
DUTTON, RW
ANTONIADIS, DA
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (11) : 2001 - 2007