LATTICE DISORDER STUDIES IN LOW-TEMPERATURE NITROGEN-IMPLANTED SILICON

被引：9

作者：

PRONKO, PP

MITCHELL, JB

SHEWCHUN, J

DAVIES, JA

机构：

[1] MCMASTER UNIV,ENGN PHYS DEPT,HAMILTON,ONTARIO,CANADA

[2] CHALK RIVER NUCL LABS,SOLID STATE SCI BRANCH,CHALK RIVER,ONTARIO,CANADA

来源：

RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1973年 / 20卷 / 04期

关键词：

D O I：

10.1080/00337577308232293

中图分类号：

TL [原子能技术]; O571 [原子核物理学];

学科分类号：

0827 ; 082701 ;

摘要：

引用

页码：257 / 263

页数：7

共 20 条

[1] DEFECT STUDIES IN CRYSTALS BY MEANS OF CHANNELING [J].

BOGH, E .

[2]

Brice D. K., 1970, Radiation Effects, V6, P77, DOI 10.1080/00337577008235048

DAVIES, DE .

[4]

Eisen F. H., 1971, Radiation Effects, V7, P143, DOI 10.1080/00337577108232575

[5]

Eisen F.H., 1972, RADIAT EFF, V13, P93, DOI [10.1080/00337577208231165, DOI 10.1080/00337577208231165]

[6]

EISEN FH, 1973, CHANNELING, pCH14

FELDMAN, LC ;

RODGERS, JW .

[8]

FRANK WFJ, 1972, DEC INT C ION IMPL S

[9]

MITCHELL JB, 1973, PRIVATE COMMUNICATIO

[10]

Morehead F. F. Jr., 1970, Radiation Effects, V6, P27, DOI 10.1080/00337577008235042