COMBINED NUMERICAL LARGE-SIGNAL MODELING APPLIED TO SOS MESFET DEVICES

被引:1
作者
NYLANDER, JO [1 ]
MASSZI, F [1 ]
TOVE, PA [1 ]
机构
[1] UNIV UPPSALA,DEPT TECHNOL,ELECTR GRP,S-75121 UPPSALA,SWEDEN
关键词
D O I
10.1108/eb010045
中图分类号
TP39 [计算机的应用];
学科分类号
081203 ; 0835 ;
摘要
引用
收藏
页码:135 / 151
页数:17
相关论文
共 20 条
[1]  
ARMSTRONG GA, 1986, 2ND P INT C SIM SEM, P449
[2]  
BOCKEMUEL R, 1963, IEEE T ELECTRON DEV, P31
[3]  
BOHLIN K, 1985, COMPLEMENTARY SI MES, P230
[4]   CURRENT TRANSPORT IN METAL-SEMICONDUCTOR BARRIERS [J].
CROWELL, CR ;
SZE, SM .
SOLID-STATE ELECTRONICS, 1966, 9 (11-1) :1035-&
[5]  
FRANZ AF, 1985, USERS GUIDE TU VIENN
[6]  
GOLIO JM, 1985, IEEE CIRCUITS DE SEP, P21
[7]   GENERAL THEORY FOR PINCHED OPERATION OF JUNCTION-GATE FET [J].
GREBENE, AB ;
GHANDHI, SK .
SOLID-STATE ELECTRONICS, 1969, 12 (07) :573-+
[8]   MINORITY-CARRIER EFFECTS UPON SMALL-SIGNAL AND STEADY-STATE PROPERTIES OF SCHOTTKY DIODES [J].
GREEN, MA ;
SHEWCHUN, J .
SOLID-STATE ELECTRONICS, 1973, 16 (10) :1141-1150
[9]   PICOSECOND PHOTOCONDUCTIVITY MEASUREMENTS OF MOBILITY AND LIFETIME IN SILICON-ON-SAPPHIRE FILMS [J].
GRIVITSKAS, V ;
WILLANDER, M ;
TELLEFSEN, JA .
JOURNAL OF APPLIED PHYSICS, 1984, 55 (08) :3169-3172
[10]   AN ACCURATE JFET MESFET MODEL FOR CIRCUIT ANALYSIS [J].
HARTGRING, CD .
SOLID-STATE ELECTRONICS, 1982, 25 (03) :233-240