GA2TE3 AND TELLURIUM INTERFACIAL LAYERS IN ZNTE/GASB HETEROSTRUCTURES STUDIED BY RAMAN-SCATTERING

被引：23

作者：

HALSALL, MP ^{[1
]}

WOLVERSON, D ^{[1
]}

DAVIES, JJ ^{[1
]}

LUNN, B ^{[1
]}

ASHENFORD, DE ^{[1
]}

机构：

[1] UNIV HULL,DEPT ENGN DESIGN & MANUFACTURE,HULL HU6 7RX,N HUMBERSIDE,ENGLAND

来源：

APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 17期

关键词：

D O I：

10.1063/1.107085

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Raman spectroscopy of ZnTe layers grown by molecular beam epitaxy on (100) GaSb is reported. When the laser excitation is above the band gap of the ZnTe, scattering is observed only from the ZnTe LO mode and overtones. With excitation below the ZnTe band gap, a series of low frequency peaks is observed. By comparison with bulk data these peaks are identified as originating from Ga2Te3 and Te present at the GaSb/ZnTe interface. We conclude that the presence of this interface material may degrade the layer quality and give rise to the anomalously large strain previously reported for such epilayers.

引用

页码：2129 / 2131

页数：3

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