FORMATION OF B2-CENTERS DURING ION IRRADIATION OF SIOX LAYERS

被引：7

作者：

GERASIMENKO, NN

TSEITLIN, GM

VASILEV, SV

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1980年 / 62卷 / 02期

关键词：

D O I：

10.1002/pssa.2210620261

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：K169 / K174

页数：6

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[4]

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[9]

SIEGEL GH, 1974, IEEE T NUCLEAR SCI, V21, P56

[10] STOICHIOMETRY OF THIN SILICON-OXIDE LAYERS ON SILICON [J].

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