PRODUCTION AND ANNEALING OF COLOR CENTERS IN RF SPUTTERED SIO2 FILMS

被引：36

作者：

HICKMOTT, TW

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1971年 / 42卷 / 06期

关键词：

D O I：

10.1063/1.1660577

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2543 / &

共 41 条

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[9] RADIATION DAMAGE IN RADIO-FREQUENCY-SPUTTERED SIO2 FILMS [J].

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[10] DETERMINATION OF ARGON CONTENT OF SPUTTERED SIO2 FILMS BY X-RAY FLUORESCENCE [J].

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