RADIATION DAMAGE IN RADIO-FREQUENCY-SPUTTERED SIO2 FILMS

被引：18

作者：

HICKMOTT, TW

机构：

[1] IBM Components Division, East Fishkill Laboratory, Hopewell Junction

来源：

APPLIED PHYSICS LETTERS | 1969年 / 15卷 / 07期

关键词：

D O I：

10.1063/1.1652981

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The optical absorption and electron spin resonance of atomic defects in rf-sputtered SiO2 films have been measured. The properties of the centers are similar to those produced when pure, fused SiO2 is bombarded with neutrons. © 1969 The American Institute of Physics.

引用

页码：232 / &

共 16 条

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[7] Lell E, 1966, PROGR CERAMIC SCI, V4, P3
[8] THE OPTICAL EFFECTS OF RADIATION INDUCED ATOMIC DAMAGE IN QUARTZ
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[9] VACUUM-ULTRAVIOLET ABSORPTION STUDIES OF IRRADIATED SILICA AND QUARTZ
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[J]. JOURNAL OF APPLIED PHYSICS, 1961, 32 (05) : 883 - &
[10] FABRICATION OF PLANAR SILICON TRANSISTORS WITHOUT PHOTORESIST
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[J]. SOLID-STATE ELECTRONICS, 1968, 11 (02) : 261 - &

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