ONSET OF DIFFUSION-DRIFT EMISSION REGIME AND THE TRANSITION FROM EXPONENTIAL TO LINEAR CURRENT-VOLTAGE CHARACTERISTIC OF TRIANGULAR BARRIER SEMICONDUCTOR STRUCTURES

被引：11

作者：

BUOT, FA

KRUMHANSL, JA

SOCHA, JB

机构：

来源：

APPLIED PHYSICS LETTERS | 1982年 / 40卷 / 09期

关键词：

D O I：

10.1063/1.93270

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：814 / 816

页数：3

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