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CHARGE INJECTION OVER BARRIERS IN UNIPOLAR SEMICONDUCTOR STRUCTURES
被引:2
作者
:
LURYI, S
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
LURYI, S
[
1
]
KAZARINOV, RF
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
KAZARINOV, RF
[
1
]
机构
:
[1]
BELL TEL LABS INC,MURRAY HILL,NJ 07974
来源
:
IEEE TRANSACTIONS ON ELECTRON DEVICES
|
1981年
/ 28卷
/ 10期
关键词
:
D O I
:
10.1109/T-ED.1981.20567
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:1242 / 1243
页数:2
相关论文
共 4 条
[1]
NEW RECTIFYING SEMICONDUCTOR STRUCTURE BY MOLECULAR-BEAM EPITAXY
[J].
ALLYN, CL
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0
引用数:
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ALLYN, CL
;
GOSSARD, AC
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0
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h-index:
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GOSSARD, AC
;
WIEGMANN, W
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引用数:
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h-index:
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WIEGMANN, W
.
APPLIED PHYSICS LETTERS,
1980,
36
(05)
:373
-376
[2]
CHANDRA A, 1979, ELECTRON LETT, V15, P91
[3]
PLANAR-DOPED BARRIERS IN GAAS BY MOLECULAR-BEAM EPITAXY
[J].
MALIK, RJ
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UNIV WALES,DEPT ELECT ENGN,SWANSEA SA2 8OO,W GLAMORGAN,WALES
MALIK, RJ
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UNIV WALES,DEPT ELECT ENGN,SWANSEA SA2 8OO,W GLAMORGAN,WALES
AUCOIN, TR
;
ROSS, RL
论文数:
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0
h-index:
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机构:
UNIV WALES,DEPT ELECT ENGN,SWANSEA SA2 8OO,W GLAMORGAN,WALES
ROSS, RL
;
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;
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UNIV WALES,DEPT ELECT ENGN,SWANSEA SA2 8OO,W GLAMORGAN,WALES
EASTMAN, LF
.
ELECTRONICS LETTERS,
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:836
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[4]
MAJORITY-CARRIER CAMEL DIODE
[J].
SHANNON, JM
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机构:
Philips Research Laboratories, Redhill, Surrey
SHANNON, JM
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←
1
→
共 4 条
[1]
NEW RECTIFYING SEMICONDUCTOR STRUCTURE BY MOLECULAR-BEAM EPITAXY
[J].
ALLYN, CL
论文数:
0
引用数:
0
h-index:
0
ALLYN, CL
;
GOSSARD, AC
论文数:
0
引用数:
0
h-index:
0
GOSSARD, AC
;
WIEGMANN, W
论文数:
0
引用数:
0
h-index:
0
WIEGMANN, W
.
APPLIED PHYSICS LETTERS,
1980,
36
(05)
:373
-376
[2]
CHANDRA A, 1979, ELECTRON LETT, V15, P91
[3]
PLANAR-DOPED BARRIERS IN GAAS BY MOLECULAR-BEAM EPITAXY
[J].
MALIK, RJ
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV WALES,DEPT ELECT ENGN,SWANSEA SA2 8OO,W GLAMORGAN,WALES
MALIK, RJ
;
AUCOIN, TR
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV WALES,DEPT ELECT ENGN,SWANSEA SA2 8OO,W GLAMORGAN,WALES
AUCOIN, TR
;
ROSS, RL
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV WALES,DEPT ELECT ENGN,SWANSEA SA2 8OO,W GLAMORGAN,WALES
ROSS, RL
;
BOARD, K
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV WALES,DEPT ELECT ENGN,SWANSEA SA2 8OO,W GLAMORGAN,WALES
BOARD, K
;
WOOD, CEC
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV WALES,DEPT ELECT ENGN,SWANSEA SA2 8OO,W GLAMORGAN,WALES
WOOD, CEC
;
EASTMAN, LF
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV WALES,DEPT ELECT ENGN,SWANSEA SA2 8OO,W GLAMORGAN,WALES
EASTMAN, LF
.
ELECTRONICS LETTERS,
1980,
16
(22)
:836
-837
[4]
MAJORITY-CARRIER CAMEL DIODE
[J].
SHANNON, JM
论文数:
0
引用数:
0
h-index:
0
机构:
Philips Research Laboratories, Redhill, Surrey
SHANNON, JM
.
APPLIED PHYSICS LETTERS,
1979,
35
(01)
:63
-65
←
1
→