CHARGE INJECTION OVER BARRIERS IN UNIPOLAR SEMICONDUCTOR STRUCTURES

被引:2
作者
LURYI, S [1 ]
KAZARINOV, RF [1 ]
机构
[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974
关键词
D O I
10.1109/T-ED.1981.20567
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:1242 / 1243
页数:2
相关论文
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[2]  
CHANDRA A, 1979, ELECTRON LETT, V15, P91
[3]   PLANAR-DOPED BARRIERS IN GAAS BY MOLECULAR-BEAM EPITAXY [J].
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[4]   MAJORITY-CARRIER CAMEL DIODE [J].
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