PERMANENT IONIZING-RADIATION EFFECTS IN DIELECTRICALLY BOUNDED FIELD-EFFECT TRANSISTORS

被引：4

作者：

NEAMEN, D ^{[1
]}

SHEDD, W ^{[1
]}

BUCHANA, B ^{[1
]}

机构：

[1] USAF,CAMBRIDGE RES LABS,AF SYST COMMAND,BEDFORD,MA 01730

来源：

关键词：

D O I：

10.1109/TNS.1973.4327387

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：158 / 165

页数：8

共 14 条

[1] [Anonymous], FIELD EFFECT TRANSIS
[2] BOCKEMUEHL RR, 1963, IEEE T ELEC DEVICES, VED10, P31
[3] COBBOLD RSC, 1970, THEORY APPLICATIONS
[4] GEHWEILLER WF, 1972, INT SOLID STATE CIRC, P96
[5] NEW DIELECTRIC ISOLATION TECHNIQUE FOR BIPOLAR INTEGRATED-CIRCUITS USING THIN SINGLE-CRYSTAL SILICON FILMS
KAMINS, TI
[J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1972, 60 (07): : 915 - +
[6] KOOI E, 1965, PHILIPS RES REP, V20, P595
[7] LEISTIKO O, 1965, IEEE T ELECTRON DEVI, VED12, P248
[8] LIECHTI CA, 1972, ISSCC DIGEST TECH PA
[9] LINDMAYER J, 1971, IEEE T NUCL SCI, VNS18, P91
[10] NEAMEN D, 1972, IEEE T NUCL SCI, VNS19, P400