NEW DIELECTRIC ISOLATION TECHNIQUE FOR BIPOLAR INTEGRATED-CIRCUITS USING THIN SINGLE-CRYSTAL SILICON FILMS

被引:15
作者
KAMINS, TI
机构
来源
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS | 1972年 / 60卷 / 07期
关键词
D O I
10.1109/PROC.1972.8807
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
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页码:915 / +
页数:1
相关论文
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[3]   RESISTIVITY OF CHEMICALLY DEPOSITED POLYCRYSTALLINE SILICON FILMS [J].
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[6]   MOS AND VERTICAL JUNCTION DEVICE CHARACTERISTICS OF EPITAXIAL SILICON ON LOW ALUMINUM-RICH SPINEL [J].
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