ELECTROCHEMICALL THINNED N/N+ EPITAXIAL SILICON - METHOD AND APPLICATIONS

[1] CRAFT WH, PRIVATE COMMUNICATIO

[2] DIELECTRIC ISOLATED INTEGRATED CIRCUIT SUBSTRATE PROCESSES [J]. PROCEEDINGS OF THE IEEE, 1969, 57 (09) : 1532 - &

[3] PREPARATION OF THIN SILICON CRYSTALS BY ELECTROCHEMICAL THINNING OF EPITAXIALLY GROWN STRUCTURES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (04) : 553 - &

[4] EDWARDS R, 1969, OCT WASH IEEE M

[5] GIBSON WM, PRIVATE COMMUNICATIO

[6] BEAM-LEAD TECHNOLOGY [J]. BELL SYSTEM TECHNICAL JOURNAL, 1966, 45 (02): : 233 - &

[7] MADLAND GR, 1966, INTEGRATED CIRCUIT E, P162

[8] THIN SILICON DEVICE TECHNOLOGY [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1970, 3 (08) : 1199 - +

[9] N+ SILICON-ELECTROLYTE INTERFACE CAPACITANCE [J]. SURFACE SCIENCE, 1971, 25 (03) : 526 - &

[10] ANODIC DISSOLUTION OF N+ SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (03) : 437 - &

[1] CRAFT WH, PRIVATE COMMUNICATIO

[2] DIELECTRIC ISOLATED INTEGRATED CIRCUIT SUBSTRATE PROCESSES [J]. PROCEEDINGS OF THE IEEE, 1969, 57 (09) : 1532 - &

[3] PREPARATION OF THIN SILICON CRYSTALS BY ELECTROCHEMICAL THINNING OF EPITAXIALLY GROWN STRUCTURES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (04) : 553 - &

[4] EDWARDS R, 1969, OCT WASH IEEE M

[5] GIBSON WM, PRIVATE COMMUNICATIO

[6] BEAM-LEAD TECHNOLOGY [J]. BELL SYSTEM TECHNICAL JOURNAL, 1966, 45 (02): : 233 - &

[7] MADLAND GR, 1966, INTEGRATED CIRCUIT E, P162

[8] THIN SILICON DEVICE TECHNOLOGY [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1970, 3 (08) : 1199 - +

[9] N+ SILICON-ELECTROLYTE INTERFACE CAPACITANCE [J]. SURFACE SCIENCE, 1971, 25 (03) : 526 - &

[10] ANODIC DISSOLUTION OF N+ SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (03) : 437 - &