N+ SILICON-ELECTROLYTE INTERFACE CAPACITANCE

[1] A CAPACITIVE DIVIDER TECHNIQUE FOR FAST INTERFACE CAPACITANCE MEASUREMENT [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (05) : 585 - +

[2] STRUCTURE OF SEMICONDUCTOR-ELECTROLYTE INTERFACE [J]. JOURNAL OF ELECTROANALYTICAL CHEMISTRY, 1965, 10 (03): : 199 - &

[3] RICHARDSON CONSTANT AND TUNNELING EFFECTIVE MASS FOR THERMIONIC AND THERMIONIC-FIELD EMISSION IN SCHOTTKY BARRIER DIODES [J]. SOLID-STATE ELECTRONICS, 1969, 12 (01) : 55 - &

[4] Duke C. B., 1969, TUNNELING SOLIDS, P34

[5] ANODIC DISSOLUTION OF HEAVILY DOPED N-TYPE GE IN AQUEOUS SOLUTIONS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (06) : 645 - &

[6] MECHANISMS OF DECOMPOSITION OF SEMICONDUCTORS BY ELECTROCHEMICAL OXIDATION AND REDUCTION [J]. ELECTROCHIMICA ACTA, 1968, 13 (06) : 1329 - &

[7] ON ROLE OF ELECTRONS AND HOLES IN SURFACE REACTIONS ON SEMICONDUCTORS [J]. SURFACE SCIENCE, 1969, 13 (01) : 265 - +

[8] GOBRECHT H, 1963, PHYS CHEM, V67, P142

[9] MOS AVALANCHE AND TUNNELING EFFECTS IN SILICON SURFACES [J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (12) : 4582 - +

[10] DENSITY OF SIO2-SI INTERFACE STATES - (MOS DEVICES SI OXIDATION 100 DEGREES C O2 + 80 PPM H2O FERMI LEVEL E) [J]. APPLIED PHYSICS LETTERS, 1966, 8 (02) : 31 - &

[1] A CAPACITIVE DIVIDER TECHNIQUE FOR FAST INTERFACE CAPACITANCE MEASUREMENT [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (05) : 585 - +

[2] STRUCTURE OF SEMICONDUCTOR-ELECTROLYTE INTERFACE [J]. JOURNAL OF ELECTROANALYTICAL CHEMISTRY, 1965, 10 (03): : 199 - &

[3] RICHARDSON CONSTANT AND TUNNELING EFFECTIVE MASS FOR THERMIONIC AND THERMIONIC-FIELD EMISSION IN SCHOTTKY BARRIER DIODES [J]. SOLID-STATE ELECTRONICS, 1969, 12 (01) : 55 - &

[4] Duke C. B., 1969, TUNNELING SOLIDS, P34

[5] ANODIC DISSOLUTION OF HEAVILY DOPED N-TYPE GE IN AQUEOUS SOLUTIONS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (06) : 645 - &

[6] MECHANISMS OF DECOMPOSITION OF SEMICONDUCTORS BY ELECTROCHEMICAL OXIDATION AND REDUCTION [J]. ELECTROCHIMICA ACTA, 1968, 13 (06) : 1329 - &

[7] ON ROLE OF ELECTRONS AND HOLES IN SURFACE REACTIONS ON SEMICONDUCTORS [J]. SURFACE SCIENCE, 1969, 13 (01) : 265 - +

[8] GOBRECHT H, 1963, PHYS CHEM, V67, P142

[9] MOS AVALANCHE AND TUNNELING EFFECTS IN SILICON SURFACES [J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (12) : 4582 - +

[10] DENSITY OF SIO2-SI INTERFACE STATES - (MOS DEVICES SI OXIDATION 100 DEGREES C O2 + 80 PPM H2O FERMI LEVEL E) [J]. APPLIED PHYSICS LETTERS, 1966, 8 (02) : 31 - &