OXYGEN AS A DONOR ELEMENT IN GERMANIUM

[1] ARMSTRONG JA, 1957, B AM PHYS SOC 2, V2, P265

[2] BILLIG E, CITED INDIRECTLY

[3] OXYGEN AND THE SURFACE ENERGY-LEVEL STRUCTURE ON GERMANIUM [J]. PHYSICAL REVIEW, 1954, 95 (01): : 284 - 285

[4] DUNLAP, 1957, PROGR SEMICONDUCTORS, V2, P182

[5] ELECTRICAL AND OPTICAL PROPERTIES OF HEAT-TREATED SILICON [J]. PHYSICAL REVIEW, 1957, 105 (06): : 1751 - 1756

[6] OXYGEN CONTENT OF SILICON SINGLE CRYSTALS [J]. JOURNAL OF APPLIED PHYSICS, 1957, 28 (08) : 882 - 887

[7] HYDROGEN AND OXYGEN IN SINGLE-CRYSTAL GERMANIUM AS DETERMINED BY VACUUM FUSION GAS ANALYSIS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1956, 103 (11) : 603 - 605

[1] ARMSTRONG JA, 1957, B AM PHYS SOC 2, V2, P265

[2] BILLIG E, CITED INDIRECTLY

[3] OXYGEN AND THE SURFACE ENERGY-LEVEL STRUCTURE ON GERMANIUM [J]. PHYSICAL REVIEW, 1954, 95 (01): : 284 - 285

[4] DUNLAP, 1957, PROGR SEMICONDUCTORS, V2, P182

[5] ELECTRICAL AND OPTICAL PROPERTIES OF HEAT-TREATED SILICON [J]. PHYSICAL REVIEW, 1957, 105 (06): : 1751 - 1756

[6] OXYGEN CONTENT OF SILICON SINGLE CRYSTALS [J]. JOURNAL OF APPLIED PHYSICS, 1957, 28 (08) : 882 - 887

[7] HYDROGEN AND OXYGEN IN SINGLE-CRYSTAL GERMANIUM AS DETERMINED BY VACUUM FUSION GAS ANALYSIS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1956, 103 (11) : 603 - 605