RESONANT AND INELASTIC TUNNELLING THROUGH CRYSTALLINE BARRIER OF PBI2

被引：8

作者：

RAULUSZKIEWICZ, J ^{[1
]}

NISHINA, Y ^{[1
]}

机构：

[1] TOHOKU UNIV,IRON STEEL & OTHER MET RES INST,SENDAI,MIYAGI 980,JAPAN

来源：

PHYSICA B & C | 1980年 / 99卷 / 1-4期

关键词：

D O I：

10.1016/0378-4363(80)90263-6

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：371 / 374

页数：4

共 9 条

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[2] DIRECT CALCULATION OF TUNNELING CURRENT .3. EFFECT OF LOCALIZED IMPURITY STATES IN BARRIER [J].

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[3]

FIVAZ RC, 1976, PHYSICS CHEM MATERIA, V4, P343

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[6] EXCITON LUMINESCENCE IN LEAD IODIDE LIFETIME, INTENSITY AND SPECTRAL POSITION DEPENDENCE ON TEMPERATURE [J].

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[7] RAMAN STUDY OF POLYTYPISM IN VAPOR-GROWN PBI2 [J].

NAKASHIMA, S .

SOLID STATE COMMUNICATIONS, 1975, 16 (09) :1059-1062

[8]

RAULUSZKIEWICZ J, 1979, 14TH P INT C PHYS SE, P757

[9] INTER-POLYTYPE CONVERSION AND LAYER-LAYER COUPLING IN PBI2 [J].

ZALLEN, R ;

SLADE, ML .

SOLID STATE COMMUNICATIONS, 1975, 17 (12) :1561-1566

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