Silicon nanostructure devices

被引：6

作者：

Eisele, I

Baumgartner, H

Hansch, W

机构：

[1] Universität der Bundeswehr München, Fakultät für Elektrotechnik, Institut für Physik

来源：

JOURNAL OF CRYSTAL GROWTH | 1995年 / 157卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(95)00322-3

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The molecular beam epitaxy of doping and heterostructures with monolayer thickness control is the basis for nanostructure devices. It is shown that additional lateral patterning via self-assembling growth leads to one- and zero-dimensional silicon nanostructures. Experimental results for MOS devices with nanometer channel length and dot arrays with heterostructures are presented.

引用

页码：248 / 254

页数：7

共 19 条

[1]

BEAUMONT SP, 1990, SCI ENG ONE ZERO DIM

[2] EXCITONIC LUMINESCENCE FROM LOCALLY GROWN SIGE WIRES AND DOTS [J].

BRUNNER, J ;

RUPP, TS ;

GOSSNER, H ;

RITTER, R ;

EISELE, I ;

ABSTREITER, G .

APPLIED PHYSICS LETTERS, 1994, 64 (08) :994-996

[3] SIGE WIRES AND DOTS GROWN BY LOCAL EPITAXY [J].

BRUNNER, J ;

SCHITTENHELM, P ;

GONDERMANN, J ;

SPANGENBERG, B ;

HADAM, B ;

KOSTER, T ;

ROSKOS, HG ;

KURZ, H ;

GOSSNER, H ;

EISELE, I ;

ABSTREITER, G .

JOURNAL OF CRYSTAL GROWTH, 1995, 150 (1-4) :1060-1064

[4]

Craighead H. G., 1992, Physics of Nanostructures. Proceedings of the Thirty-Eighth Scottish Universities Summer School in Physics. A NATO Advanced Study Institute, P21

[5] EQUILIBRIUM SHAPE OF SI [J].