FABRICATION OF SILICON QUANTUM WIRES USING SEPARATION BY IMPLANTED OXYGEN WAFER

A new fabrication method of silicon quantum wires using separation by implanted oxygen (SIMOX) wafer has been proposed, which combines Si KOH anisotropic etching and local oxidation of silicon (LOCOS) techniques. In the fabrication, the cross-sectional dimensions of Si wires are determined solely by the thickness of the SOI layer. Using this novel method, we, have fabricated a Si quantum wire with dimensions less than 100 nm and confirmed its great potential for making ultrafine structures without the need for high-resolution lithography or etching.