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NANOMETER METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS - A FLEXIBLE TOOL FOR STUDYING INVERSION LAYER PHYSICS

被引：14
作者：
MANKIEWICH, PM
HOWARD, RE
JACKEL, LD
SKOCPOL, WJ
TENNANT, DM
机构：
[1] AT&T Bell Lab, Holmdel, NJ, USA, AT&T Bell Lab, Holmdel, NJ, USA
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1986年 / 4卷 / 01期
关键词：
D O I：
10.1116/1.583337
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
19
引用
收藏
页码：380 / 382
页数：3
相关论文
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    [J]. SURFACE SCIENCE, 1984, 142 (1-3) : 1 - 13
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    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (09) : 1669 - 1674
  • [7] MICROFABRICATION AS A SCIENTIFIC TOOL
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    [J]. SCIENCE, 1983, 221 (4606) : 117 - 121
  • [8] HOWARD RE, 1982, VLSI ELECTRONICS MIC, V5, P146
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  • [10] NONMONOTONIC VARIATIONS OF THE CONDUCTANCE WITH ELECTRON-DENSITY IN APPROXIMATELY 70-NM-WIDE INVERSION-LAYERS
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    [J]. PHYSICAL REVIEW LETTERS, 1984, 52 (03) : 224 - 227
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