ONE-DIMENSIONAL CONDUCTANCE IN SILICON MOSFETS

被引：37

作者：

HARTSTEIN, A

WEBB, RA

FOWLER, AB

WAINER, JJ

机构：

来源：

SURFACE SCIENCE | 1984年 / 142卷 / 1-3期

关键词：

D O I：

10.1016/0039-6028(84)90275-9

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：1 / 13

页数：13

共 9 条

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