ONE-DIMENSIONAL LOCALIZATION AND INTERACTION EFFECTS IN NARROW (0.1-MU-M) SILICON INVERSION-LAYERS

被引：130

作者：

SKOCPOL, WJ

JACKEL, LD

HU, EL

HOWARD, RE

FETTER, LA

机构：

来源：

PHYSICAL REVIEW LETTERS | 1982年 / 49卷 / 13期

关键词：

D O I：

10.1103/PhysRevLett.49.951

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：951 / 955

页数：5

共 12 条

[1] QUASIPARTICLE LIFETIME IN DISORDERED TWO-DIMENSIONAL METALS [J].

ABRAHAMS, E ;

ANDERSON, PW ;

LEE, PA ;

RAMAKRISHNAN, TV .

PHYSICAL REVIEW B, 1981, 24 (12) :6783-6789

[2] MAGNETORESISTANCE AND HALL-EFFECT IN A DISORDERED 2-DIMENSIONAL ELECTRON-GAS [J].

ALTSHULER, BL ;

KHMELNITZKII, D ;

LARKIN, AI ;

LEE, PA .

PHYSICAL REVIEW B, 1980, 22 (11) :5142-5153

[3] MAGNETORESISTANCE IN SI METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS - EVIDENCE OF WEAK LOCALIZATION AND CORRELATION [J].

BISHOP, DJ ;

DYNES, RC ;

TSUI, DC .

PHYSICAL REVIEW B, 1982, 26 (02) :773-779

[4] CONDUCTANCE IN RESTRICTED-DIMENSIONALITY ACCUMULATION LAYERS [J].

FOWLER, AB ;

HARTSTEIN, A ;

WEBB, RA .

PHYSICAL REVIEW LETTERS, 1982, 48 (03) :196-199

[5] THEORY OF WEAKLY LOCALIZED REGIME OF THE ANDERSON LOCALIZATION IN 2-DIMENSIONS [J].

FUKUYAMA, H .

SURFACE SCIENCE, 1982, 113 (1-3) :489-504

[6] EXPERIMENTAL-STUDY OF ANDERSON LOCALIZATION IN THIN WIRES [J].

GIORDANO, N ;

GILSON, W ;

PROBER, DE .

PHYSICAL REVIEW LETTERS, 1979, 43 (10) :725-728

[7]

SKOCPOL WJ, UNPUB

[8] THE EFFECT OF INELASTIC ELECTRON-SCATTERING ON THE CONDUCTIVITY OF VERY THIN WIRES [J].

THOULESS, DJ .

SOLID STATE COMMUNICATIONS, 1980, 34 (08) :683-685

[9] MAGNETOCONDUCTANCE AND WEAK LOCALIZATION IN SILICON INVERSION-LAYERS [J].

WHEELER, RG .

PHYSICAL REVIEW B, 1981, 24 (08) :4645-4651

[10]

WHEELER RG, COMMUNICATION

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