TRANSITION FROM 1-DIMENSIONAL TO TWO-DIMENSIONAL HOPPING CONDUCTIVITY IN SILICON ACCUMULATION LAYERS

被引：28

作者：

FOWLER, AB ^{[1
]}

HARTSTEIN, A ^{[1
]}

WEBB, RA ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

PHYSICA B & C | 1983年 / 117卷 / MAR期

关键词：

D O I：

10.1016/0378-4363(83)90618-6

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：661 / 666

页数：6

共 13 条

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[9] ANDERSON TRANSITION [J].

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[10] METAL-INSULATOR-TRANSITION IN IMPURITY BAND OF N-TYPE GAAS INDUCED BY A MAGNETIC-FIELD AND LOSS OF DIMENSION [J].

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