VISIBLE LUMINESCENCE FROM SILICON BY HYDROGEN IMPLANTATION AND ANNEALING TREATMENTS

被引：12

作者：

PAVESI, L ^{[1
]}

GIEBEL, G ^{[1
]}

TONINI, R ^{[1
]}

CORNI, F ^{[1
]}

NOBILI, C ^{[1
]}

OTTAVIANI, G ^{[1
]}

机构：

[1] UNIV MODENA, DIPARTIMENTO FIS, I-41100 MODENA, ITALY

来源：

APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 04期

关键词：

D O I：

10.1063/1.112331

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Luminescence at an energy higher than the Si band-gap energy has been observed following H implantation and annealing treatments of Si samples. This phenomenon is discussed considering the damage caused by the H implantation and its evolution with thermal treatments. No definitive answer on the origin of the luminescence is given but various possible models are proposed.

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页码：454 / 456

页数：3

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