ROOM-TEMPERATURE LUMINESCENCE FROM ER-IMPLANTED SEMIINSULATING POLYCRYSTALLINE SILICON

被引：106

作者：

LOMBARDO, S ^{[1
]}

CAMPISANO, SU ^{[1
]}

VANDENHOVEN, GN ^{[1
]}

CACCIATO, A ^{[1
]}

POLMAN, A ^{[1
]}

机构：

[1] FOM,INST ATOM & MOLEC PHYS,1098 SJ AMSTERDAM,NETHERLANDS

来源：

APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 14期

关键词：

D O I：

10.1063/1.110608

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Semi-insulating polycrystalline silicon films with oxygen concentrations in the range 4-27 at. % were deposited by low-pressure chemical vapor deposition of SiH4 and N2O onto silicon substrates, annealed at 920-degrees-C, and then implanted with 2 X 10(15) 500 keV Er ions/cm2. After annealing at temperatures in the range 300-900-degrees-C, the samples show intense room-temperature luminescence around 1.54 mum, characteristic of intra-4f emission from Er3+, upon excitation using an Ar ion laser. The luminescence intensity increases with increasing oxygen concentration in the film. The luminescence is attributed to Er3+ ions in oxygen-rich shells around Si nanograins, excited by a photocarrier-mediated process.

引用

页码：1942 / 1944

页数：3

共 15 条

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