IMPURITY ENHANCEMENT OF THE 1.54-MU-M ER3+ LUMINESCENCE IN SILICON

被引：382

作者：

MICHEL, J

BENTON, JL

FERRANTE, RF

JACOBSON, DC

EAGLESHAM, DJ

FITZGERALD, EA

XIE, YH

POATE, JM

KIMERLING, LC

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

[2] USN ACAD,DEPT CHEM,ANNAPOLIS,MD 21402

来源：

JOURNAL OF APPLIED PHYSICS | 1991年 / 70卷 / 05期

关键词：

D O I：

10.1063/1.349382

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effect of impurity coimplantation in MeV erbium-implanted silicon is studied. A significant increase in the intensity of the 1.54-mu-m Er3+ emission was observed for different coimplants. This study shows that the Er3+ emission is observed if erbium can form an impurity complex in silicon. The influence of these impurities on the Er3+ photoluminescence spectrum is demonstrated. Furthermore we show the first room-temperature photoluminescence spectrum of erbium in crystalline silicon.

引用

页码：2672 / 2678

页数：7

共 17 条

[1] BENTON JL, UNPUB J APPL PHYS
[2] Dieke G. H., 1968, SPECTRA ENERGY LEVEL
[3] DIETRICH HB, 1985, P SOC PHOTO-OPT INST, V530, P195, DOI 10.1117/12.946487
[4] MICROSTRUCTURE OF ERBIUM-IMPLANTED SI
EAGLESHAM, DJ
MICHEL, J
FITZGERALD, EA
JACOBSON, DC
POATE, JM
BENTON, JL
POLMAN, A
XIE, YH
KIMERLING, LC
[J]. APPLIED PHYSICS LETTERS, 1991, 58 (24) : 2797 - 2799
[5] Ennen H., 1985, Thirteenth International Conference on Defects in Semiconductors, P115
[6] 1.54-MU-M LUMINESCENCE OF ERBIUM-IMPLANTED III-V SEMICONDUCTORS AND SILICON
ENNEN, H
SCHNEIDER, J
POMRENKE, G
AXMANN, A
[J]. APPLIED PHYSICS LETTERS, 1983, 43 (10) : 943 - 945
[7] 1.54-MU-M ELECTROLUMINESCENCE OF ERBIUM-DOPED SILICON GROWN BY MOLECULAR-BEAM EPITAXY
ENNEN, H
POMRENKE, G
AXMANN, A
EISELE, K
HAYDL, W
SCHNEIDER, J
[J]. APPLIED PHYSICS LETTERS, 1985, 46 (04) : 381 - 383
[8] PHOTOLUMINESCENCE EXCITATION MEASUREMENTS ON GAAS-ER GROWN BY MOLECULAR-BEAM EPITAXY
ENNEN, H
WAGNER, J
MULLER, HD
SMITH, RS
[J]. JOURNAL OF APPLIED PHYSICS, 1987, 61 (10) : 4877 - 4879
[9] OPTICAL ACTIVATION OF ER-3+ IMPLANTED IN SILICON BY OXYGEN IMPURITIES
FAVENNEC, PN
LHARIDON, H
MOUTONNET, D
SALVI, M
GAUNEAU, M
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1990, 29 (04): : L524 - L526
[10] KIMERLING LC, 1975, I PHYS C SER, V23, P126

← 1 2 →