PHOTOLUMINESCENCE EXCITATION MEASUREMENTS ON GAAS-ER GROWN BY MOLECULAR-BEAM EPITAXY

被引：108

作者：

ENNEN, H

WAGNER, J

MULLER, HD

SMITH, RS

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 61卷 / 10期

关键词：

D O I：

10.1063/1.338353

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4877 / 4879

页数：3

共 18 条

[1] ZEEMAN ANALYSIS OF THE YTTERBIUM LUMINESCENCE IN INDIUM-PHOSPHIDE [J].

ASZODI, G ;

WEBER, J ;

UIHLEIN, C ;

PULIN, L ;

ENNEN, H ;

KAUFMANN, U ;

SCHNEIDER, J ;

WINDSCHEIF, J .

PHYSICAL REVIEW B, 1985, 31 (12) :7767-7771

[2] 1.54-MU-M LUMINESCENCE OF ERBIUM-IMPLANTED III-V SEMICONDUCTORS AND SILICON [J].

ENNEN, H ;

SCHNEIDER, J ;

POMRENKE, G ;

AXMANN, A .

APPLIED PHYSICS LETTERS, 1983, 43 (10) :943-945

[3] RARE-EARTH ACTIVATED LUMINESCENCE IN INP, GAP AND GAAS [J].

ENNEN, H ;

KAUFMANN, U ;

POMRENKE, G ;

SCHNEIDER, J ;

WINDSCHEIF, J ;

AXMANN, A .

JOURNAL OF CRYSTAL GROWTH, 1983, 64 (01) :165-168

[4] 1.54-MU-M ELECTROLUMINESCENCE OF ERBIUM-DOPED SILICON GROWN BY MOLECULAR-BEAM EPITAXY [J].

ENNEN, H ;

POMRENKE, G ;

AXMANN, A ;

EISELE, K ;

HAYDL, W ;

SCHNEIDER, J .

APPLIED PHYSICS LETTERS, 1985, 46 (04) :381-383

[5] LUMINESCENCE OF THE RARE-EARTH ION YTTERBIUM IN INP, GAP, AND GAAS [J].

ENNEN, H ;

POMRENKE, G ;

AXMANN, A .

JOURNAL OF APPLIED PHYSICS, 1985, 57 (06) :2182-2185

[6]

ENNEN H, 1985, J ELECTRON MATER A, V14, P115

[7] OPTICAL-PROPERTIES AND STABLE, BROADLY TUNABLE CW LASER OPERATION OF NEW FA-TYPE CENTERS IN TL+-DOPED ALKALI-HALIDES [J].

GELLERMANN, W ;

LUTY, F ;

POLLOCK, CR .

OPTICS COMMUNICATIONS, 1981, 39 (06) :391-395

[8] YTTERBIUM-DOPED INP LIGHT-EMITTING DIODE AT 1.0-MU-M [J].

HAYDL, WH ;

MULLER, HD ;

ENNEN, H ;

KORBER, W ;

BENZ, KW .

APPLIED PHYSICS LETTERS, 1985, 46 (09) :870-872

[9]

KASATKIN VA, 1981, SOV PHYS SEMICOND+, V15, P352

[10]

KASATKIN VA, 1980, SOV PHYS SEMICOND, V14, P1093

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