HIGH-FREQUENCY HIGH-POWER STATIC INDUCTION TRANSISTOR

被引：57

作者：

NISHIZAWA, JI ^{[1
]}

YAMAMOTO, K ^{[1
]}

机构：

[1] SEMICONDUCTOR RES FDN,SENDAI,JAPAN

来源：

关键词：

D O I：

10.1109/T-ED.1978.19076

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：314 / 322

页数：9

共 15 条

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[2] MOCHIDA Y, UNPUBLISHED
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[5] NISHIZAWA J, JAPAN J APPL PHYS S, P151
[6] NISHIZAWA J, JAPAN J APPL PHYS S, P157
[7] NISHIZAWA J, 1958, SCI REP RES I TOHOKU, V10, P91
[8] NISHIZAWA J, UNPUBLISHED
[9] FIELD-EFFECT TRANSISTOR VERSUS ANALOG TRANSISTOR (STATIC INDUCTION TRANSISTOR)
NISHIZAWA, JI
TERASAKI, T
SHIBATA, J
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, ED22 (04) : 185 - 197
[10] TRANSISTOR ELECTRONICS - IMPERFECTIONS, UNIPOLAR AND ANALOG TRANSISTORS
SHOCKLEY, W
[J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1952, 40 (11): : 1289 - 1313