FIELD-EFFECT TRANSISTOR VERSUS ANALOG TRANSISTOR (STATIC INDUCTION TRANSISTOR)

被引:338
作者
NISHIZAWA, JI
TERASAKI, T
SHIBATA, J
机构
[1] TOHOKU UNIV,RES INST ELECT COMM,SENDAI,JAPAN
[2] SEMICOND RES INST,SENDAI,JAPAN
关键词
D O I
10.1109/T-ED.1975.18103
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 [电气工程]; 0809 [电子科学与技术];
摘要
引用
收藏
页码:185 / 197
页数:13
相关论文
共 35 条
[1]
TRAVELLING-WAVE FIELD-EFFECT TRANSISTORS [J].
ABE, A ;
NISHIZAWA, JI .
INTERNATIONAL JOURNAL OF ELECTRONICS, 1966, 21 (02) :153-+
[2]
UNIPOLAR FIELD-EFFECT TRANSISTOR [J].
DACEY, GC ;
ROSS, IM .
PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1953, 41 (08) :970-979
[3]
THE FIELD EFFECT TRANSISTOR [J].
DACEY, GC ;
ROSS, IM .
BELL SYSTEM TECHNICAL JOURNAL, 1955, 34 (06) :1149-1189
[4]
DACEY GC, 1953, PHYS REV, V90, P749
[5]
PURE SPACE-CHARGE-LIMITED ELECTRON CURRENT IN SILICON [J].
DENDA, S ;
NICOLET, MA .
JOURNAL OF APPLIED PHYSICS, 1966, 37 (06) :2412-&
[7]
GUPTA RK, TO BE PUBLISHED
[8]
VOLGATE-CURRENT CHARACTERISTICS OF GAAS J-FETS IN HOT ELECTRON RANGE [J].
LEHOVEC, K ;
ZULEEG, R .
SOLID-STATE ELECTRONICS, 1970, 13 (10) :1415-&
[9]
Lilienfield J. E., 1933, U. S. Patent, Patent No. [1, 900, 1900018]
[10]
Lilienfield J. E., 1930, U. S. Patent, Patent No. [1745175, 1,745,175]