THEORY OF INSULATED-GATE FIELD-EFFECT TRANSISTORS NEAR AND BEYOND PINCH-OFF

被引：41

作者：

GEURST, JA

机构：

来源：

SOLID-STATE ELECTRONICS | 1966年 / 9卷 / 02期

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D O I：

10.1016/0038-1101(66)90084-0

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

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页码：129 / +

页数：1

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