PHYSICAL PROCESSES IN INSULATED-GATE FIELD-EFFECT TRANSISTORS

被引：10

作者：

JOHNSON, JE

机构：

来源：

SOLID-STATE ELECTRONICS | 1964年 / 7卷 / 12期

关键词：

D O I：

10.1016/0038-1101(64)90064-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：861 / 871

页数：11

共 26 条

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[9] FELDEFFEKT UND PHOTOLEITUNG AN ZNO-EINKRISTALLEN [J].

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[10] SILICON INSULATED-GATE FIELD-EFFECT TRANSISTOR [J].

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HEIMAN, FP .

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