IDEALITY AND NOISE-FIGURE CHARACTERISTICS OF RF SPUTTERED MILLIMETER GAAS DIODES

被引：2

作者：

ANAND, Y ^{[1
]}

CHRISTOU, A ^{[1
]}

DAY, H ^{[1
]}

机构：

[1] USN,RES LAB,WASHINGTON,DC 20375

来源：

ELECTRONICS LETTERS | 1980年 / 16卷 / 15期

关键词：

D O I：

10.1049/el:19800403

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：581 / 583

页数：3

共 9 条

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[2]

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[3]

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[5]

FRIIS HT, 1974, P IRE, V32, P419

[6] CONVERSION LOSS AND NOISE OF MICROWAVE AND MILLIMETER-WAVE MIXERS .1. THEORY [J].

HELD, DN ;

KERR, AR .

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[7]

KIM HB, 1974, 741F6MPATTP1 WEST RE

[8] EPITAXIAL REGROWTH OF AR-IMPLANTED AMORPHOUS SILICON [J].

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MAYER, JW .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (10) :5199-5206

[9] EPITAXIAL REGROWTH OF NE-IMPLANTED AND KR-IMPLANTED AMORPHOUS SILICON [J].

WITTMER, M ;

ROTH, J ;

REVESZ, P ;

MAYER, JW .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (10) :5207-5212

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