EPITAXIAL REGROWTH OF AR-IMPLANTED AMORPHOUS SILICON

被引：109

作者：

REVESZ, P ^{[1
]}

WITTMER, M ^{[1
]}

ROTH, J ^{[1
]}

MAYER, JW ^{[1
]}

机构：

[1] CALTECH,PASADENA,CA 91125

来源：

JOURNAL OF APPLIED PHYSICS | 1978年 / 49卷 / 10期

关键词：

D O I：

10.1063/1.324415

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：5199 / 5206

页数：8

相关论文

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