SIGNIFICANCE OF ION-IMPLANTATION INDUCED STRESS IN SILICON

被引：22

作者：

WILLIAMS, JS ^{[1
]}

机构：

[1] UNIV SALFORD,DEPT ELECT ENGN,SALFORD M5 4WT,LANCASHIRE,ENGLAND

来源：

PHYSICS LETTERS A | 1977年 / 60卷 / 04期

关键词：

D O I：

10.1016/0375-9601(77)90116-5

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：330 / 332

页数：3

共 18 条

[1] INFLUENCE OF SPUTTERING, RANGE SHORTENING AND STRESS-INDUCED OUT-DIFFUSION ON RETENTION OF XENON IMPLANTED IN SILICON [J].

BLANK, P ;

WITTMAACK, K ;

SCHULZ, F .

NUCLEAR INSTRUMENTS & METHODS, 1976, 132 (JAN-F) :387-392

[2]

BONSE U, 1969, PHYS STATUS SOLIDI, V33, P36

[3]

CARTER G, TO BE PUBLISHED

[4]

CHRISTODOULIDES CE, TO BE PUBLISHED

[5]

DAVIDSON SM, 1971, ION IMPLANTATION, P51

[6]

EERNISSE EP, 1973, ION IMPLANTATION SEM, P531

[7]

EERNISSE EP, TO BE PUBLISHED

[8] X-RAY STUDY OF LATERAL STRAINS IN ION-IMPLANTED SILICON [J].

GERWARD, L .

ZEITSCHRIFT FUR PHYSIK, 1973, 259 (04) :313-322

[9] ANNEALING BEHAVIOR OF SILICON BOMBARDED WITH 140 KEV SI++ IONS [J].

GOLANSKI, A ;

FIDERKIEWICZ, A ;

ROSINSKI, W ;

BAUER, C ;

GROTZSCHEL, R ;

RUDOLPH, W .

RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1975, 25 (03) :213-214

[10] X-RAY TOPOGRAPHIC STUDIES OF STRAINS IN SILICON IMPLANTED WITH IN IONS AT HIGH DOSES [J].

ITOH, N ;

MORIKAWA, Y ;

NAKAU, T ;

KURODA, H .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1975, 14 (12) :2069-2070

← 1 2 →