X-RAY STUDY OF LATERAL STRAINS IN ION-IMPLANTED SILICON

被引：28

作者：

GERWARD, L ^{[1
]}

机构：

[1] TECH UNIV DENMARK,LAB APPL PHYS 3,LYNGBY 2800,DENMARK

来源：

ZEITSCHRIFT FUR PHYSIK | 1973年 / 259卷 / 04期

关键词：

D O I：

10.1007/BF01395937

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：313 / 322

页数：10

共 19 条

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[8] A STUDY OF STRAINS IN ABRADED DIAMOND SURFACES [J].

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[9] LATTICE STRAIN IN ION-BOMBARDED SI STUDIED BY X-RAY MOIRE TECHNIQUE [J].

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[10]

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