LATTICE STRAIN IN ION-BOMBARDED SI STUDIED BY X-RAY MOIRE TECHNIQUE

被引：5

作者：

GERWARD, L

ANDERSEN, AL

CHRISTIA.G

机构：

来源：

关键词：

D O I：

10.1016/0375-9601(72)90329-5

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：63 / &

共 7 条

[1] MOIRE PATTERNS OF ATOMIC PLANES OBTAINED BY X-RAY INTERFEROMETRY [J].

BONSE, U ;

HART, M .

ZEITSCHRIFT FUR PHYSIK, 1966, 190 (04) :455-&

BONSE, U ;

HART, M ;

SCHWUTTKE, GH .

PHYSICA STATUS SOLIDI, 1969, 33 (01) :361-+

[3] AN X-RAY INTERFEROMETER [J].

BONSE, U ;

HART, M .

CHRISTIANSEN, G ;

GERWARD, L ;

ANDERSEN, AL .

JOURNAL OF APPLIED CRYSTALLOGRAPHY, 1971, 4 (OCT1) :370-+

[5] SENSITIVE TECHNIQUE FOR STUDYING ION-IMPLANTATION DAMAGE [J].

EERNISSE, EP .

[6]

SCHWUTTKE GH, 1968, RADIATION EFFECTS SE, P406

[7] LATTICE EXPANSION AND STRAIN IN ION-BOMBARDED GAAS AND SI [J].

WHAN, RE ;

ARNOLD, GW .