SENSITIVE TECHNIQUE FOR STUDYING ION-IMPLANTATION DAMAGE

被引：83

作者：

EERNISSE, EP

机构：

来源：

关键词：

D O I：

10.1063/1.1653549

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：581 / &

共 10 条

[1]

BALZ RE, 1970, HANDBOOK TABLES APPL, P224

BRENNER, A ;

SENDEROFF, S .

JOURNAL OF RESEARCH OF THE NATIONAL BUREAU OF STANDARDS, 1949, 42 (02) :105-123

[3]

Brice D. K., 1970, Radiation Effects, V6, P77, DOI 10.1080/00337577008235048

[4] SPUTTERING AND STRAIN OF SILICON BY ION IMPLANTATION [J].

EERNISSE, EP .

[5]

EISEN FH, 1970, P EUROPEAN C ION IMP

[6]

MAYER JW, 1970, ION IMPLANTATION SEM, P65

[7]

NOWACKI W, 1962, THERMOELASTICITY, P10

[8] DEFORMATION AND FRACTURE OF SMALL SILICON CRYSTALS [J].

PEARSON, GL ;

READ, WT ;

FELDMANN, WL .

ACTA METALLURGICA, 1957, 5 (04) :181-191

[9]

TIMOSHENKO S, 1955, STRENGTH MATERIALS 1, P149

[10] LATTICE EXPANSION AND STRAIN IN ION-BOMBARDED GAAS AND SI [J].

WHAN, RE ;

ARNOLD, GW .