SPUTTERING AND STRAIN OF SILICON BY ION IMPLANTATION

[1] X-RAY INVESTIGATION OF LATTICE DEFORMATIONS IN SILICON INDUCED THROUGH HIGH-ENERGY ION IMPLANTATION [J]. PHYSICA STATUS SOLIDI, 1969, 33 (01): : 361 - +

[2] CARTER G, 1968, ION BOMBARDMENT SOLI, P310

[3] EERNISSE EP, 1970, SCRR70377 SAND LAB R

[4] HEIDENREICH RD, 1964, FUNDAMENTALS TRANSMI, P36

[5] JOHNSON WS, 1970, PROJECTED RANGE STAT

[6] SPUTTERING AND DEPTH-DISTRIBUTION PHENOMENA IN KCL AL2O3 AND TIO2 [J]. CANADIAN JOURNAL OF PHYSICS, 1968, 46 (06) : 473 - &

[7] THEORY OF SPUTTERING .I. SPUTTERING YIELD OF AMORPHOUS AND POLYCRYSTALLINE TARGETS [J]. PHYSICAL REVIEW, 1969, 184 (02): : 383 - +

[8] SPUTTERING EXPERIMENTS WITH 1- TO 5-KEV AR+ IONS [J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (01) : 153 - &

[9] STOCKBRIDGE CD, 1966, VACUUM MICROBALANCE, P193

[10] WARNER AW, 1969, ULTRA MICRO WEIGHT D, P137

[1] X-RAY INVESTIGATION OF LATTICE DEFORMATIONS IN SILICON INDUCED THROUGH HIGH-ENERGY ION IMPLANTATION [J]. PHYSICA STATUS SOLIDI, 1969, 33 (01): : 361 - +

[2] CARTER G, 1968, ION BOMBARDMENT SOLI, P310

[3] EERNISSE EP, 1970, SCRR70377 SAND LAB R

[4] HEIDENREICH RD, 1964, FUNDAMENTALS TRANSMI, P36

[5] JOHNSON WS, 1970, PROJECTED RANGE STAT

[6] SPUTTERING AND DEPTH-DISTRIBUTION PHENOMENA IN KCL AL2O3 AND TIO2 [J]. CANADIAN JOURNAL OF PHYSICS, 1968, 46 (06) : 473 - &

[7] THEORY OF SPUTTERING .I. SPUTTERING YIELD OF AMORPHOUS AND POLYCRYSTALLINE TARGETS [J]. PHYSICAL REVIEW, 1969, 184 (02): : 383 - +

[8] SPUTTERING EXPERIMENTS WITH 1- TO 5-KEV AR+ IONS [J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (01) : 153 - &

[9] STOCKBRIDGE CD, 1966, VACUUM MICROBALANCE, P193

[10] WARNER AW, 1969, ULTRA MICRO WEIGHT D, P137